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| BC857BF...BC860BF PNP Silicon AF Transistor * For AF input stages and driver applications * High current gain * Low collector-emitter saturation voltage * Low noise between 30 Hz and 15 kHz * Complementary types: BC847BF, BC848BF BC849BF, BC850BF (NPN) Type Marking Pin Configuration Package 3 1 2 BC857BF BC858BF BC859BF BC860BF Maximum Ratings Parameter Collector-emitter voltage BC857BF, BC860BF BC858BF, BC859BF Collector-emitter voltage BC857BF, BC860BF BC858BF, BC859BF Collector-base voltage BC857BF, BC860BF BC858BF, BC859BF Emitter-base voltage BC857BF, BC860BF BC858BF, BC859BF Collector current Peak collector current Peak base current Peak emitter current 3Fs 3Ks 4Bs 4Fs 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C TSFP-3 TSFP-3 TSFP-3 TSFP-3 Symbol VCEO Value 45 30 Unit V VCES 50 30 VCBO 50 30 VEBO 5 5 IC ICM IBM IEM Ptot Tj Tstg 1 100 200 200 200 250 150 -65 ... 150 mA mA mW C Total power dissipation, TS 128C Junction temperature Storage temperature Jun-16-2004 BC857BF...BC860BF Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value 90 Unit K/W Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 mA, BC857BF, BC860BF IC = 10 mA, IB = 0 mA, BC858BF, BC859BF 45 30 V(BR)CBO - A Collector-base breakdown voltage IC = 10 A, IE = 0 mA, BC857BF, BC860BF IC = 10 A, IE = 0 mA, BC858BF, BC859BF 50 30 V(BR)CES Collector-emitter breakdown voltage IC = 10 A, VBE = 0 V, BC857BF, BC860BF IC = 10 A, VBE = 0 V, BC858BF, BC859BF 50 30 V(BR)EBO I CBO Emitter-base breakdown voltage IE = 1 A, IC = 0 A 5 Collector-base cutoff current VCB = 30 V, IE = 0 A VCB = 30 V, IE = 0 A, TA = 150 C h FE 250 290 75 250 700 850 650 - 0.015 5 475 mV 300 650 750 820 DC current gain2) IC = 10 A, VCE = 5 V IC = 2 mA, VCE = 5 V 220 VCEsat Collector-emitter saturation voltage2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat Base emitter saturation voltage 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBE(ON) Base-emitter voltage2) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 2Pulse test: t < 300s; D < 2% 600 - 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Jun-16-2004 BC857BF...BC860BF AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 200 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k, BC859BF IC = 200 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k, BC860BF Equivalent noise voltage IC = 200 A, V CE = 5 V, RS = 2 k, f = 10...50 Hz , BF860BF Vn 1 4 0.11 V 1 4 F dB h22e 30 S h21e 330 h12e 2 10-4 h11e 4.5 k Ceb 10 Ccb 3 pF fT 250 MHz 3 Jun-16-2004 BC857BF...BC860BF DC current gain hFE = (IC) VCE = 5 V 10 3 EHP00382 Collector-emitter saturation voltage IC = (VCEsat), hFE = 20 10 2 EHP00380 h FE 5 100 C 25 C C mA 100 C 25 C -50 C 10 2 5 -50 C 10 1 5 10 1 5 10 5 0 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 C 2 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat Base-emitter saturation voltage IC = (V BEsat), hFE = 20 10 2 mA EHP00379 Collector cutoff current ICBO = (TA) VCB = 30 V 10 4 nA EHP00381 C 100 C 25 C -50C CB0 10 3 5 10 2 5 10 1 5 10 5 0 10 5 1 max typ 10 0 5 10 -1 10 -1 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat 0 50 100 C TA 150 4 Jun-16-2004 BC857BF...BC860BF Transition frequency fT = (IC) VCE = 5 V 10 3 MHz EHP00378 Collector-base capacitance CCB= (VCB0) Emitter-base capacitance CEB= (VEB0) BC 856...860 EHP00376 fT 5 C CB0 ( C EB0 ) 12 pF 10 8 C EBO 10 2 6 5 4 C CBO 2 10 1 10 -1 5 10 0 5 10 1 mA 10 2 0 10 -1 5 10 0 V VCB0 C 10 1 (VEB0 ) Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 300 10 2 mW K/W Ptot 200 10 1 150 100 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 50 RthJS 0 0 20 40 60 80 100 120 C 150 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp 5 Jun-16-2004 BC857BF...BC860BF Permissible Pulse Load Ptotmax/P totDC = (tp) 10 3 h parameter he = (IC) normalized VCE = 5V 10 2 he 5 BC 856...860 EHP00383 P totmax/P totDC 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 5 h 11e VCE = 5 V h 12e 10 0 5 h 21e h 22e 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -1 10 -1 5 10 0 mA 10 1 tp C h parameter he = (VCE ) normalized IC = 2mA BC 856...860 EHP00384 Noise figure F = (VCE) IC = 0.2mA, R S = 2k , f = 1kHz 20 dB BC 856...860 EHP00385 2.0 he 1.5 C = 2 mA F h 11 15 1.0 h12 10 0.5 h 22 5 0 0 10 20 V VCE 30 0 10 -1 5 10 0 5 10 1 V VCE 10 2 6 Jun-16-2004 BC857BF...BC860BF Noise figure F = (f) IC = 0.2mA, VCE = 5V, RS = 2 k BC 856...860 EHP00386 Noise figure F = (I C) VCE = 5V, f = 120Hz BC 856...860 EHP00387 20 dB 20 dB F 15 F 15 R S = 1 M 100 k 10 k 10 10 500 5 5 1 k 0 10 -2 10 -1 10 0 10 1 kHz 10 2 f 0 10 -3 10 -2 10 -1 10 0 mA 10 1 C Noise figure F = (IC ) VCE = 5V, f = 1kHz 20 dB BC 856...860 EHP00388 Noise figure F = (I C) VCE = 5V, f = 10kHz 20 dB BC 856...860 EHP00389 F 15 R S = 1 M 10 100 k 10 k F 15 R S = 1 M 100 k 10 500 10 k 1 k 5 500 5 1 k 0 10 -3 10 -2 10 -1 10 0 mA 10 1 0 10-3 10 -2 10 -1 10 0 mA 10 1 C C 7 Jun-16-2004 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. |
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